Semiconductor Damage Study. Phase II.
Abstract
The report summarizes the results from a test and analysis program on semiconductor damage and burnout failure due to injection of high power pulse inputs to the semiconductor devices in simulation of EMP effects. It includes a discussion of theoretical principles of pulse power burnout as well as a description of test rationale and equipment used. Data on both short duration (5 to 50 nsec) and long duration (0.1 to 10 microsec) pulse effects are included. Some data is also included on power pulse effects on relays. The effect of multiple pulse as opposed to single pulse testing is discussed. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 01, 1971
- Accession Number
- AD0881230
Entities
People
- D. C. Wunsch
- J. B. Singletary
Organizations
- Braddock Dunn & McDonald