1.06 Micron Image Converter.
Abstract
A materials research program on the growth of Ga(1-x)In(x)As alloy layers in which a number of factors that directly affect 1.06 micrometer photoresponse was carried out. Improvements in growth and activation conditions resulted in substantial improvements in 1.06 micrometer response, the highest sensitivity being 2%. InAs composition between 17 and 21% and doping levels in the 5 x 10 to the 18th power/cc range gave optimum results. Studies of the activation procedure showed that the Cs -O on the surface of these ternary alloy cathodes is about a monolayer thick. A determination was made of the surface escape probability vs band gap. Several transmission-type cathodes were tested and the best transmission 1.06 micrometer sensitivity was 1.25%. An external processing system was developed for the manufacture of image tubes utilizing these cathodes. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1971
- Accession Number
- AD0883646
Entities
People
- D. G. Fisher
- G. O. Fowler
- J. R. Appert
- R. E. Enstrom