Feasibility Study for Simulation of Secondary Gamma Effects on Semiconductors with Infrared Irradiation.
Abstract
This report assesses the feasibility of using near-infrared irradiation to simulate the effect of the nuclear explosion secondary gamma environment on semiconductors. The purpose is to develop a method of testing nuclear hardness of ballistic missile electronics in the secondary gamma environment which does not depend on the usual nuclear radiation exposure. It is found that infrared photons and gamma rays from the nuclear detonation have approximately equivalent effects on silicon semiconductors. The feasibility of further work to develop a suitable infrared source and techniques for device and circuit irradiation is indicated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1968
- Accession Number
- AD0884632
Entities
People
- G. R. Ezell