Radiation Effects on MSI/LSI Electronic Devices and Circuits.
Abstract
Transient radiation effects was investigated on bipolar and MOS MSI/LSI devices as well as basic thin-film devices. The transient susceptibility of the junction-isolated bipolar and MOS devices was due primarily to the substrate junction photocurrent. Transient failure levels were generally in the range of 10 to the 8th power to 10 to the 9th power rads(Si)/s for the bipolar devices, and on the order of 1-10 rads(Si) for the dose-dependent MOS devices. Failure level of the hardened bipolar MSI device was approximately 3 x 10 to the 8th power rads(Si)/s. No electrical performance degradation, latch-up or burn-out was observed on any device through exposure to a narrow-pulse 10 to the 11th power rads(Si)/s (2900 rads(Si)) ionizing radiation environment. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1971
- Accession Number
- AD0886479
Entities
People
- D. N. Pocock
- G. T. Fujii
- J. P. Raymond
- J. R. Srour
- R. E. Johnson