Electroreflectance. Part 2. Electroreflectance.
Abstract
The contribution of the electroreflectance effect to the determination of the band structure of a solid semiconductor material is reviewed. One feature of the effect is of particular interest: the sequence of narrow spectral regions in which the electric field causes the reflectance to change most noticeably approximately coincides with the photon energies of interband transition thresholds. The bank structure information contained in temperature dependencies, effects of surface potential, field orientation, and optical polarization is discussed in detail. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1971
- Accession Number
- AD0887871
Entities
People
- Bernhard O. Seraphin
Organizations
- Naval Air Weapons Station China Lake