Experimental and Theoretical Investigation of Functional Dependencies of Rapid Annealing.
Abstract
Short-term annealing experiments on solar cells have shown that the annealing of neutron damage in p-type silicon from 100 microsec. to 1000 sec is dependent on the integrated injected minority-carrier density. The PN code has been used to study the short-term annealing of solar cells and transistors. Agreement between the cluster-annealing model and the p-type solar cell data was obtained, within a factor of 1.4 for resistivities from 1.0 to 100 ohm-cm, injection levels, Delta n/P(0), from 0.0000001 to 0.0001, and times later than 0.01 sec. Annealing experiments on cutoff transistors have shown anneal factors as high as 6 as late as 10 msec after the neutron pulse. Prediction of the transistor data from electrical measurements, the cluster model, and a PN code integration over the transistor structure was within a factor of two, although the experimental curve was not as steep as the predicted one. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1971
- Accession Number
- AD0888998
Entities
People
- C. E. Mallon
- J. F. Colwell
- J. L. Azarewicz
- J. W. Harrity
- R. E. Leadon