Low Work Function Photocathode.
Abstract
Work performed on a program to develop high quantum yield photocathodes at near infrared wavelengths is summarized. Attempts to form thin films of Ga75In25As on GaAs substrates using vacuum deposition are discussed. Results on photoemission from GaSb covered with a thin (50A) surface layer of GaP are presented indicating that the surface work function cannot be lowered in this manner. Efforts to make thin (10 microns self-supporting films of GaAs are described indicating that transparent self-supporting III-V photoemitters are feasible. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1972
- Accession Number
- AD0890725
Entities
People
- Rowland W. Redington
Organizations
- General Electric