Research on Microwave Amplification in Semiconductors. Volume II. A Model for the High-Field Conduction of Electrons in Germanium.
Abstract
The significance of this research lies in the fact that it greatly enhances the understanding of hot electrons in germanium, and by implication in other semiconductors. The high-field, low-temperature conduction properties of electrons in germanium are studied theoretically. It is assumed that the subsidiary <100> energy band minima have a sharp truncating effect on the electron energy distribution, and that scattering through these minima is the dominant scattering process. Intravalley scattering by acoustic and optic phonons is introduced by a perturbation approach. The resulting model is used to calculate several properties of the electron conduction. In the high-field limit, the velocity is found to reach an anisotropic saturation value, in qualitative agreement with experimental data. The introduction of acoustic and optic phonon scattering produces deviations from saturation which are in qualitative agreement with the experimental data. Negative longitudinal differential mobilities in the <100> and <110> directions are indicated, while the mobility in the <111> direction remains positive. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1971
- Accession Number
- AD0890949
Entities
People
- Larry James Nevin
Organizations
- University of Colorado Boulder