Impedance Characterization of Gunn-Effect Diode Packages at X-Band Frequencies.
Abstract
The procedures for, and results of, experiments performed to derive a Gunn-effect diode package lumped-element equivalent circuit valid in the X-band frequency range of 8.0 to 12.4 GHz are presented. The approach taken was to postulate an equivalent circuit from the physical configuration of the diode package construction and then verify the validity of the circuit on the basis of data obtained from precise impedance measurements. The parasitic reactances associated with the packaged device constitute a coupling circuit between the diode junction and the diode mount and are particularly significant in the design of microwave circuits using solid-state devices. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1972
- Accession Number
- AD0892528
Entities
People
- Marko Afendykiw
Organizations
- Naval Air Weapons Station China Lake