Production Engineering Measure for an Electron-Beam Machine and Microwave Transistors.
Abstract
The objective of this program is to establish and demonstrate, under production conditions, the use of electron-beam photolithography in the fabrication of integrable microwave transistors. During this quarter, the contact 'masking' level computer programs for the L-216-E1, L-216-E2, and L-216-E3 transistors were written for use with negative resists. Minor modifications were made to PDL (Pattern Definition Language) to extend the pattern generation capability of the electron-beam machine. Progress this quarter on automatic pattern registration (APR) over one field included completion of debug of the software and hardware. Initial tests showed alignment accuracy to be better than + or - A1/2 micrometers. Progress on the automatic stage and work chamber included fabrication completion of the mechanical hardware, the electrical hardware, and the stage control software. Microwave transistor lot EBT-1 has been processed through the P(+) masking level. The only electron-beam 'masking' level remaining to complete fabrication of L-216-E1 transistors is the contact level.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1971
- Accession Number
- AD0894020
Entities
People
- Daniel R. Ch'en
- Gilbert L. Varnell
- Roger R. Webster
Organizations
- Texas Instruments