GaAs on Beryllia Substrates for Application to Microwave Generation.
Abstract
The second phase of a materials research program to develop techniques for the growth of device-quality thin-film heteroepitaxial GaAs on single-crystal BeO substrates for use in microwave generators, such as Gunn-effect devices, is described. The primary objectives are (1) optimization of the structural and electrical properties of GaAs/BeO films so that they will be suitable for use in preparing good quality microwave devices, and (2) exploratory fabrication of such devices. The program involves chemical vapor deposition of GaAs by the metalorganic-hydride process employing trimethylgallium and arsine.
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 1972
- Accession Number
- AD0901302
Entities
People
- Arthur C. Thorsen
- Daniel Medellin
- Harold M. Manasevit
- Ralph P. Ruth