Production Engineering Measure. Solid Encapsulated Semiconductor Devices - Volume I
Abstract
This is the final documentary report of the Production Engineering Measure (PEM) program for improving the reliability and performance of Solid encapsulated semiconductor devices to meet the rigorous requirements of military application environments. A small signal NPN transistor (GE type D32D) and a small signal PNP transistor (GE type D34E) were vehicles used. Basic changes in the semiconductor structure were made on these devices to enhance the performance of the products and to improve the capability of solid encapsulated transistors. The semiconductor topological structure was based on the application of a clean thermal oxide a pyrolytic silicon nitride barrier over the oxide, refractory metalization and a glass coating over the entire structure except at contact windows for the emitter and base regions. The refractory metalization system was a platinum silicide/molybdenum/gold laminar structure that was capable of withstanding the high temperatures associated with glassivation process. This system, through proper processing, provided good ohmic contacts to both the N and P regions of the transistors. As result of these features, device stability was enhanced by preventing the migration of contaminating ions, such as sodium, to the silicon surface. The glassivation prevented metalization corrosion and in addition provided complete chip passivation. As a result, a chip is now available that is compatible with hermetic, plastic and hybrid packaging.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 01, 1972
- Accession Number
- AD0902871
Entities
People
- Byron L. Bair
- David K. Hartman
- Erwin A. Herr
Organizations
- General Electric