Cathode-Driven, High Gain, Crossed-Field Amplifier.
Abstract
A very high gain (40-60 dB), S-band crossed-field amplifier is being designed. This high gain is expected because the rf drive power will be on a cathode circuit where it can interact with the electrons in a very low energy region. With electronic coupling only between rf drive and output circuits there will be very little or no reverse power; therefore, no isolators will be needed. A 17-vane strapped bar line anode network is being used for the high gain CFA. This anode circuit has been assembled and cold tested. A similar 17-vane circuit has been designed and constructed and is also being evaluated in cold test. A 60 kV dc blocked coaxial rf transition, needed to introduce the rf drive power on the high voltage cathode circuit, has been designed and constructed. The initial cold test results show that this device has the required impedance match across the desired frequency band. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 27, 1972
- Accession Number
- AD0904262
Entities
People
- George Macmaster
Organizations
- RTX