Electroreflectance. Part 8. Symmetry Analyses.
Abstract
In semiconductors, a correlation between the observed electroreflectance and the characteristic parameters of the energy-band structure has been established. More recently, by using the inherent symmetry breaking properties of the modulating electric field, even more detailed information has been obtained about the 'k-space' origin of optical transitions. These symmetry analysis studies, both theoretical and experimental, were initiated and completed at NWC. The results of these studies are presented in three reprints of papers previously published in the open literature under the following titles: (1) 'Symmetry Analysis of Electroreflectance Spectra'; (2) 'Detailed Study of the Gamma (sub 15) Conduction-Band Minimum in Germanium by Photoemission and Transverse Electroreflectance'; and (3) 'Symmetry of the 4.5-eV Optical Interband Threshold in GaAs'.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1972
- Accession Number
- AD0904625
Entities
People
- D. S. Kyser
- J. E. Fischer
- N. Bottka
- T. M. Donovan
- V. L. Rehn
Organizations
- Naval Air Weapons Station China Lake