1.06 Micron Avalanche Photodiode.
Abstract
The development of an inverted heterojunction III-V alloy microwave avalanche photodiode for use as the detector in a 10 to the 9th power bit/sec satellite-to-satellite 1.06 micrometers laser communications system is reported. The results of this work show that these devices can give very high quantum efficiencies at 1.064 micrometers (near unity internal quantum efficiencies), narrowband photoresponse characteristics, extremely high speed response (risetimes as fast as 24 ps; 15 GHz bandwidths) and low leakage currents (as low as a few na near breakdown). While the microwave avalanche gain reported thus far is not extremely high, the approx 15 db gains observed are sufficient, when combined with the near unity quantum efficiency these devices exhibit, to make them far more efficient detectors for the 1.06 micrometers communication system application than any other 1.06 micrometers high speed photodetector. In fact, it is noted that only a 10 or 15 db increase in avalanche gain would make the device competitive with the 0.53 micrometers frequency-doubled approach to the gigabit communications system, even when used with a 50 ohm preamp. With an improved preamp design, the III-V alloy APD's with the present approx 15 db gains could equal or better the performance of the 0.53 micrometers approach. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0906445
Entities
People
- Richard C. Eden