Epitaxial Sublimation Methods for the Study of Pseudo-Binary Semiconductor Alloys

Abstract

This portion of the ARPA program centers on surface properties affecting the electro-optical behavior of semiconductors particularly the IV/VI semiconductors and alloys used in infrared emitters and detectors. These surface properties are dominated by chemisorbed impurities. (Related effects produced by electromigration of impurity ions dominate the electrical properties of the semiconductor-oxide interface.) In IV-VI device technology chemisorption effects are both strong and diverse, determining carrier populations in surface regions and throughout film structures, producing sensitization and aging, and, as is now shown, affecting the quality of epitaxial growth. The primary purpose of the NOL ultra-high vacuum experimental effort is to clarify the nature of the interaction of gases, primarily O2 and H, with epitaxial IV-VI films.

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Document Details

Document Type
Technical Report
Publication Date
May 01, 1972
Accession Number
AD0906784

Entities

Organizations

  • Naval Ordnance Laboratory

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Born Approximations
  • Carrier Mobility
  • Crystal Lattices
  • Crystal Structure
  • Detectors
  • Electrical Properties
  • Electron Energy
  • Electrons
  • Energy Levels
  • Failure Mode And Effect Analysis
  • Measurement
  • Scattering
  • Semiconductors
  • Soft X Rays
  • Space Charge
  • Thermodynamics
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics