Development of 100-W, 1.7- to 3.4-Gigahertz, Linear Power Transistor.
Abstract
A new transistor, the TA8758, has been designed. This transistor uses the RCA overlay structure with metal grid, polycrystal silicon emitter protection, and emitter ballasting. To expedite the evaluation of technology and the development of microstrip circuits, however, the TA8407 transistor is being used as the initial test vehicle. A new diffusion process using boron doped silicon dioxide for the base diffusion source and either arsenic phosphorous or arsenic doped silicon dioxide for the emitter diffusion source has been developed. This new diffusion process gives a base width of approximately 0.10 micrometer or less without base pushout. The process makes possible the control of the narrow base width, and because of the reduction of bulk-crystal-lattice defects, emitter efficiency and overall transistor performance are improved.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1972
- Accession Number
- AD0906801
Entities
People
- Ronald A. Duclos