Cathode-Driven, High Gain, Crossed-Field Amplifier.
Abstract
A cathode-driven, S-band, crossed-field amplifier is being developed to achieve high gain. This amplifier will have a pure metal secondary emitting cathode formed into a slow-wave structure to propagate rf power. Since the rf drive power is close to the cathode where the electrons are emitted, it can control the electrons in a low-energy region. Therefore, a traveling electric field of relatively small amplitude will have considerable effect on the electrons. During this report period, slow-wave circuits were developed for the cathode structure. From the cold test versions of the cathode circuit, the desired phase shift characteristics were obtained along with a satisfactory impedance match. An internal rf termination has been assembled for the cathode circuit. A dc blocked rf transition has been designed, and a colt test model has been assembled. The rf match is desirable with less than 0.65 dB transmission loss across the operating band of interest. A hot test anode has been completed, and initial isolation measurements were made between the cathode and anode circuit. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 18, 1973
- Accession Number
- AD0906872
Entities
People
- George Macmaster
- Kenneth Dudley
Organizations
- RTX