Low-Noise GaAs Field-Effect Transistor X-Band Amplifier Development.
Abstract
This report documents the results of the breadboard development of X-band low-noise amplifiers using Schottky-gate field-effect transistors for ultimate use in receiver front ends of phased-array modules. Two breadboards were built and evaluated, with the evaluation of the first providing redesign inputs for the second. Amplifier design goals were 12-dB gain with 5-dB noise figure from 9.2 to 9.8 GHz. With available devices, the amplifier noise figure was 7.5 dB. The device noise figure was partly compromised by the LID package. The devices were characterized for X-band operation for S-parameters of the basic device, for S-parameters when mounted on microstrip with a built-in bias network, for optimum microstrip noise input match and constant noise input match circles, and for gain-stability input-output match circles on microstrip. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0907212
Entities
People
- R. E. Cooper
Organizations
- Texas Instruments