Complementary Broadband Power Amplifier, 225 to 400 Megahertz.

Abstract

Twelve UHF high-power-amplifier modules were developed, utilizing thin-film hybrid integrated circuit technology and a modular building approach. Several functional, integrated, power-amplifier stages were cascaded and paralleled, utilizing 3-dB quadrature couplers to achieve the high power gain and output power. The power amplifiers were designed to operate over the 225- to 400-megahertz frequency range and provide a power output of 40 t0 50 watts of (CW) power. Each functional, integrated, power-amplifier stage utilized thin-film inductors, capacitors, resistors and transistor pellets mounted on a single 350-mil-square BeO substrate. These components were ultrasonically wire-bonded together forming a hybrid integrated circuit. The power amplifier stages were designed for direct insertion into a 50-ohm transmission line. The UHF power amplifier modules were designed specifically for amplitude-modulation systems where 40 to 50 watts fo peak power are required (10-watt carrier level). (Author)

Document Details

Document Type
Technical Report
Publication Date
Dec 01, 1972
Accession Number
AD0907497

Entities

People

  • Robert Minton

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Amplifiers
  • Amplitude Modulation
  • Broadband
  • Circuits
  • Electronic Amplifier
  • Films
  • Frequency
  • Integrated Circuits
  • Modulation
  • Peak Power
  • Power
  • Power Amplifiers
  • Power Gain
  • Thin Films
  • Transistors
  • Transmission Lines

Fields of Study

  • Engineering
  • Physics

Readers

  • Electronics Engineering