GaAlAs Diode-Pumped Nd:YAG Laser.
Abstract
This report is a summary of the major accomplishments and conclusions of a 12-month program to develop a laboratory model of a room-temperature GaAlAs diode-pumped Nd:YAG laser. The major objective of the program was to investigate the CW TEM sub 00 performance of a diode-pumped laser operating in a temperature range compatible with practical applications in space. The laser developed on this program consisted of a room-temperature 120-device linear array of GaAlAs light-emitting diodes, coupled via a gold-coated, hemielliptical cylindrical reflector to a 1.5-mm diameter by 7.5-cm-long Nd:YAG laser rod. Temperature of the rod could be varied by thermoelectric cooling modules from room temperature to -22 C. The laser produced a CW TEM sub 00 output power of slightly over 80 mW for a laser rod temperature of -22 C. This represents the highest level of CW TEM sub 00 power reported to date for a diode-pumped laser. Due to cooling with thermoelectric modules, an optimum rod temperature exists where overall laser efficiency is maximum. At the optimum rod temperature of -13 C, a maximum laser efficiency of 0.089 percent was achieved. At this temperature, a CW TEM sub 00 output power of 64 mW was obtained for 72 watts of total electrical input power (48 watts for the diode array plus 24 watts for the thermoelectric coolers). TEM sub 00 operation was substantiated by beam profile scans and by measurements of beam divergence.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1972
- Accession Number
- AD0907545
Entities
People
- Eugene G. Dierschke
- Raymond B. Allen
Organizations
- Texas Instruments