Production Engineering Measure Solid Encapsulated Semiconductor Devices.
Abstract
The purpose of this PEM is to develop the production capacity to produce small signal plastic transistors capable of qualifying for military applications. Tests A and B: a comparison of two types of wafer passivation. Test A wafers are SiO2 passivated and Test B wafers are Si3N4 passivated. Test C: a comparison of two methods of device surface cleaning. The samples built under Tests A and B were cleaned using deionized water during assembly. The samples built for Test C were the same as Test A and B samples except a 500 C steam clean was performed while the devices were still in wafer form. Test D: a comparison of various assembly methods. The devices built for tests A, B and C were assembled with and without die coat and backfill (silicone impregnation). Test H: a comparison of a new gold front metallization to the standard aluminum front metal used in Tests A through D. Test E: assembly of the best performer from all previous tests and shipment of the first article. Test F: assembly and shipment of the production devices.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1972
- Accession Number
- AD0908969
Entities
People
- James C. Wright
- Leroy C. Donnally
Organizations
- Motorola Mobility