Cathode-Driven, High Gain, Crossed-Field Amplifier.
Abstract
A high gain (40-60 dB), S-band crossed-field amplifier is being developed. The high gain is to be obtained by introducing the rf drive signal at the source of electrons. This is being accomplished by forming the secondary emission cathode into a slow-wave structure that will support microwave energy. The traveling-wave on the cathode will control the space charge and induce current into the anode circuit. The cathode structure used to introduce the rf drive signal will provide a high degree of isolation between the amplified output signal and the rf drive energy. During this report period a hot test version of the cathode circuit was assembled and cold-test information is being obtained on the complete cathode assembly, which includes internal rf load, dc block, microwave window, and dc short-circuiting stubs. A hot-test anode has been completed which has phase shift characteristics similar to those of the cathode circuit.
Document Details
- Document Type
- Technical Report
- Publication Date
- Apr 13, 1973
- Accession Number
- AD0909228
Entities
Organizations
- RTX