Active Thin Film Optical Elements for Integrated Optics.
Abstract
The objective of the work reported herein is to achieve multiple signal processing type operations in an active thin film element useful for the implementation of integrated optical circuits. This report discusses the structural requirements, theory, fabrication, and performance of active thin film optical waveguides suitable for the 10 micron CO2 laser radiation. Strong optical confinement has been achieved by utilizing the effects of free carrier depression and dispersion. Techniques for the fabrication of etched grating optical coupler and efficient interdigital transducers on the surface of GaAs thin films have been developed. By using properly selected GaAs epitaxial thin film elements with a carrier concentration < or approximately 10 to the 13th power/cc, various active functions, including both the electrooptic and the acoustooptic interactions of the 10.6 micrometer guided-wave mode in these thin film waveguides have been demonstrated. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- May 01, 1973
- Accession Number
- AD0909830
Entities
People
- J. L. Swindal
- P. K. Cheo
- T. M. Reeder
Organizations
- United Technologies Corporation