Studies of Silver Interlayer Photocathodes at 1.06 Microns.
Abstract
The initial objective of this program is the demonstration of an improvement of quantum efficiency at 1.06 micrometers for a semitransparent Si:Cs2O photocathode through the introduction of an Ag interlayer at the Si:Cs2O interface. An additional program element was added with the completion of negotiations for the development and delivery of a prototype III-V photocathode reflectronic image intensifier. In this quarter an improvement in photocathode quantum efficiency at 1.06 micrometers was demonstrated with the introduction of an Ag interlayer at a Si:Cs-O interface. Also, a Rutherford backscattering analysis of Ge ion implanted Si corroborates the results of earlier LEED studies indicative of SI:Ge alloy formation. In addition, a modified GaAs expitaxial growth system has produced 130 micrometers thick epilayers which have been activated to 1000 microangstroms/lumen sensitivity. A prototype version of the reflectronic image intensifier configuration was used to demonstrate an axial resolution of 50 lppm.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1972
- Accession Number
- AD0909968
Entities
People
- I. J. D'haenens
Organizations
- HRL Laboratories