Broadband Near Infrared Laser Detector.
Abstract
Proper theoretical treatment of the transmission mode photocathode is shown to require a correct treatment both of the interfacial recombination velocity and of electron-hole pair generation in the grading region. The rate of change of lattice constant with respect to bandgap is shown to be the determining factor in obtaining a low interfacial recombination velocity. These calculations show from first principles that no better performance can ever be obtained from GaAs/GaAsP/GaP photocathodes than that which has been obtained experimentally already. Cooled operation of zinc-doped InGaAsP quaternary III-V photocathodes shows superior properties to either InGaAsP room temperature operation or InAsP ternary photocathodes low temperature operation. The barrier height at the InGaAsP-Cs2O interface is lowered by cooling, giving increased electron escape probability and new highs in quantum efficiency over a wide wavelength range. A 1.06-micron quantum efficiency of 7.5% per incident photon was observed at -90 C. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 01, 1973
- Accession Number
- AD0909970
Entities
People
- Lawrence W. James