LOC GaAlAs Laser Development.
Abstract
LOC lasers for the wavelength of 8800 were fabricated by GA sub (1-x)Al sub x As. solution epitaxy. The emission beam angle was varied between 21 and 80 degrees by varying the optical index changes at the n-side cavity boundary. Output power data are presented for the temperature range of 25 to 70 C. External slope efficiencies in excess of 1 watt/A, and optical power densities greater than 4 watt/mil of facet width, were observed at room temperature. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1973
- Accession Number
- AD0912133
Entities
People
- David L. Carr
- Friedrich H. Doerbeck
Organizations
- Texas Instruments