1.06 Micron High Sensitivity IR Photocathode.
Abstract
The design and progress towards development of a field assisted double heterojunction photocathode with high quantum efficiency at 1.06 micron is reported. This project covers three main areas: 1. The growth by liquid phase epitaxy and characterization of GaAsSb and GaAlAsSb alloys of suitable composition for fabricating a heterojunction photocathode. 2. Experimental and theoretical studies on the electron and hole transport and optical properties of heterojunctions between various III-V alloys grown by liquid phase epitaxy. 3. The design, fabrication and testing of a double heterojunction p-n-p photocathode structure with a p-n junction collector. Experimental studies on the electrical transport and optical properties of the heterojunctions required for the photocathode show that the anticipated problems with potential barriers in the conduction band do not exist. These results have significant implications for many other heterojunction devices. All of our results in this program support the validity of the double heterojunction photocathode concept. The only remaining problem to realize this structure is to refine the materials and fabrication technology. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1973
- Accession Number
- AD0912522
Entities
People
- J. S. Harris Jr.