Semiconductor Vulnerability. Volume II. Experimental Threshold Failure Levels of Selected Diodes and Transistors, Phase III.
Abstract
This report presents, for a selected group of semiconductor devices, pulse-power burn-out data sufficient to establish failure threshold curves. The failure curves were obtained from the experimental failure data using previously developed device failure models. This work is an extension and experimental corroboration of estimated pulse power failure levels obtained from two simple failure models which make use of device handbook parameters. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1973
- Accession Number
- AD0912530
Entities
People
- J. A. Myers
- J. B. Singletary
- W. O. Collier
Organizations
- Braddock Dunn & McDonald