Integrated-Circuit Process Control and Development.
Abstract
An evaluation of the integrated circuit process, designated E-1, used in the Air Force Avionics Integrated Circuit Facility, was made using photomicroscopy, scanning electron microscope, and spreading resistance measurement techniques. Based on previous data and this data, a new integrated-circuit process, designated E-2, was developed. A test bar was designed incorporating a variety of test structures to measure process parameters. The E-2 process was characterized and evaluated using this test bar. In addition, photomicroscopy, scanning electron microscope, incremental sheet resistance, and spreading resistance techniques were used to evaluate process results. Using these techniques, all the processes used for device fabrication were evaluated, including epitaxy, diffusion, photoresist, and metallization. Measurements were made to determine the F sub T of the devices produced. Further process improvements are recommended, particularly in the areas of photoresist and metallization. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1973
- Accession Number
- AD0912964
Entities
People
- Dale B. Devries
- Gregg Lee
- Stacy Watelski
Organizations
- Texas Instruments