Research on Photoelectronic Imaging Devices.
Abstract
The Photoelectronic Imaging Devices Program continued to grow during the past year, with primary emphasis on materials studies for devices. The use of photoluminescence as a method for studying electron diffusion lengths in photocathodes as reported last year was extended to study surface recombination velocities in GaAs-GaP heterojunctions. The ultra high vacuum system which was built for photocathode activation studies has been improved by the addition of an Auger Electron Spectrometer which enables in situ examination of the surfaces of specimens at various stages of the activation procedure. An X-ray laboratory has been set up. It is equipped for X-ray topography as well as for powder analysis and single crystal alignment. The studies in the X-ray laboratory led to the development of two new methods for evaluating over-exposed photographic films. A program of materials preparation using gel growth or chemical deposition was initiated. Ag2S films were made for evaluation as photoconductive vidicon targets.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1973
- Accession Number
- AD0913437
Entities
People
- B. Heimann
- G. Lengyel
- G. Sadasiv
- P. Mcilvaine
- S. Mardix
Organizations
- University of Rhode Island