Development of Variable Affinity Barrier Photoemitter
Abstract
This research and development program was directed toward establishing the feasibility of fabricating high quantum efficiency photo emitters based on the Variable Affinity Barrier (VAB). Although extreme fabrication difficulties were encountered, which necessitated radical changes in emitter designs, a few samples did exhibit electron emission. However, these samples were short lived and photo emissive measurements could not be conducted. In all, three different design approaches were investigated. These were: (1) Fabricating VAB junctions using single crystal p type silicon, (2) Fabricating VAB junctions using epitaxial p on p+ silicon, and (3) Fabricating VAB junctions using a tin oxide film on p type silicon. Only the last approach was partially successful--emission occurred. However, the results do not preclude that the other two design approaches are unfeasible, but only that during this program it was not possible to fabricate the necessary geometries or heterojunctions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 20, 1972
- Accession Number
- AD0914057
Entities
People
- John L. Mize