Analysis of the Performance of IR Detectors Under Radiation Environment.
Abstract
Extrinsic photoconductive detectors have been simulated with the PN computer code. The simulation has been used to study several general detector phenomena such as dielectric relaxation, the response to single-gamma ionization events, and the effect of contacts and temperature on the IR response signals. It has also been used to help analyze the response-time histories of silicon detectors, following Linac irradiations. From these results, a preliminary trapping model for low-temperature silicon has been formulated. The computer code is equally applicable to photovoltaic detectors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 25, 1973
- Accession Number
- AD0914493
Entities
People
- James A. Naber
- Roland E. Leadon