Production Engineering Measures for Temperature Compensated Microcircuit Crystal Oscillator.
Abstract
The early examples of the silicon-on-sapphire C-MOS integrated circuit developed for the MCTCXO yielded excessive power consumption. Investigation showed the high power consumption to be directly related to the relatively low threshold voltage, Vth, of the C-MOS transistors on the integrated circuit. Integrated circuits were manufactured with higher values of threshold voltage which significantly reduced power consumption. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 28, 1973
- Accession Number
- AD0914914
Entities
People
- Donald L. Thomann
- Howard D. Hinnah