Advanced Slit Detectors for Star Sensors.
Abstract
This program was undertaken as the first phase toward the development of fast, high gain solid state photodetectors capable of replacing photomultipliers, vidicons or similar devices in strapdown sensors for attitude reference systems. The underlying device concept for this first phase was the minority carrier trapped photoconductor. This approach was realized in the use of GaP to which a carefully controlled quantity of copper was added. Photoconductive gains of 500 for +4.8 AO stars have been realized. Very encouraging slit uniformity has been observed which is the result of the achievement of high quality contacting procedures and material uniformity. Growth processes, contacting procedure, material evaluation and fabrication are reviewed. The photoconductive characterization of this material is extensive and the theoretical model status is presented. Data taken shows that Cu is in fact trapping minority carriers as anticipated, accounting for the high gains. Performance data on finished detectors is included as well as a survey of the effect of various environmental factors. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1973
- Accession Number
- AD0916012
Entities
People
- John B. Flynn
- Paul E. Petersen
- Richard G. Schulze
Organizations
- Honeywell International, Inc.