Semiconductor-Insulator Surface Studies in Ge and GaSb.

Abstract

Apparatus for the deposition of insulators (principally SiO2 on germanium is described. The results of C(V) measurements on MIS structures, after insulator deposition and after various high temperature anneals, are given. A surface state density of 5 x 10 to the 11th power/sq. cm. has been achieved. Experiments with the Liquid Phase Epitaxial (LPE) deposition of GaSb are described. Carrier densities and mobilities are comparable to values reported for other deposition techniques. (Author)

Document Details

Document Type
Technical Report
Publication Date
May 01, 1973
Accession Number
AD0916715

Entities

People

  • Richard W. Aldrich

Organizations

  • General Electric

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Dielectrics
  • Electronics
  • Germanium
  • High Temperature
  • Liquid Phases
  • Liquids
  • Measurement
  • Mobility
  • Phase
  • Semiconductors
  • Solid State Electronics

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene