Exploratory Research and Development Program on III-V Semiconductor Crystals.
Abstract
A summary is presented of the results achieved in an exploratory research and development program on III-V semiconductor crystals. High quality single crystals of undoped and doped GaAs and GaSb were grown in a horizontal Bridgman furnace. Selected lots of 400 grams of GaSb and 600 grams of GaAs were cut into < 100 > oriented wafers and delivered to Night Vision Laboratories. Two techniques were investigated for the preparation of homogeneous single crystals of Ga1-xInxAs with 0.3 < x < 0.7. Melt growth in a horizontal Bridgman furnace produced homogeneous ingots but no single crystals. Vapor phase transport of presynthesized Ga1-xInxAs in a closed tube, using iodine as the transport agent, produced single crystals platelets as large as 0.8 cm x 0.4cm and appears to be a promising technique for preparing single crystals of large dimensions. (Author)
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 28, 1974
- Accession Number
- AD0916806
Entities
People
- J. F. Black
Organizations
- United Technologies Corporation