Semiconductor-Insulator Structures for the 1- to 2-Micrometer Region
Abstract
The goal of this contract is to develop, fabricate, evaluate, and deliver to NVL thin-film structures consisting of semiconductors having band- gaps on the order of 0.7 eV and compatible insulators. The following requirements are also goals: (1) high-field tunneling transport; (2) semiconductor surface passivation; (3) semiconductor masking for diffusion and selective etching; (4) surface charge transport; and (5) antireflection coatings. Activities of the program include semiconductor material preparation (GaInAs), insulator preparation, and characterization by both electrical and nonelectrical techniques of semi-conductor-insulator structures. The primary semiconductor vehicles for this study have been GaSb and GaInAs, but early work was done on germanium; silicon was used as a control substrate for insulator depositions throughout the program. Present plans are to concentrate for the remainder of the program on Ga(0.5)In(0.5)As, which has a 0.7-eV band-gap, and to continue to use silicon as a control substrate. The emphasis in insulator preparation has been on low-temperature processing, to prevent degradation of semiconductor properties. Three techniques are being explored: reactive plasma deposition (RPD) which is being used to deposit AlO(x), SiO(x), and SiN(x); liquid-phase anodization for native oxides and sulfides; and plasma anodization also for native insulators.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 15, 1973
- Accession Number
- AD0917252
Entities
People
- A. R. Reinberg
- J. M. Caywood
- K. L. Lawley
- R. T. Bate
- W. C. Rhines
Organizations
- Texas Instruments