Gallium Arsenide Digital Integrated Circuits.

Abstract

This report describes the results of Phase I of the Gallium Arsenide Digital Integrated Circuits program, which was intended to demonstrate the feasibility of fabricating digital circuits with GaAs metal-semiconductor field-effect transistor (MESFET) technology. Dc, RF and switching parameters of the GaAs MESFET were characterized, a large-signal nonlinear device model developed and verified with the characterization data and a MESFET logic gate fabricated. The logic gate exhibited a propagation delay of 60 ps plus 15 ps per output load and a useful bandwidth of 3-4 GHz. Based on these experimental results, it is predicted that practical medium-scale logic systems with 2-3 GHz clock rates will be possible. Progress in the development of a MESFET process with self-aligned gate is reported. (Author)

Document Details

Document Type
Technical Report
Publication Date
Mar 01, 1974
Accession Number
AD0918668

Entities

People

  • Charles A. Liechti
  • Rory L. Van Tuyl

Organizations

  • Hp

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Circuits
  • Digital Circuits
  • Field Effect Transistors
  • Gallium
  • Gallium Arsenides
  • Integrated Circuits
  • Logic
  • Logic Gates
  • Metal Oxide Semiconductors
  • Metals
  • Microwave Integrated Circuits
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics