Optimization of Strontium Titanate (SrTiO3) Thin Films Fabricated by Metal Organic Chemical Vapor Deposition (MOCVD) for Microwave-Tunable Devices

Abstract

An introductory overview of commonly employed deposition methods for strontium titanate (STO) thin films with previously achieved dielectric properties is presented. For the US Army Research Laboratorys Gen 2 complex oxide metal organic chemical vapor deposition (MOCVD) system, STO thin films were grown on a platinized silicon substrate, Pt/TiO2/SiO2/Si, or PtSi. All STO films were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, and energy dispersive spectroscopy. Studies of mass flow rates and total gas flow rates were performed to investigate their respective roles in the resulting STO film characteristics. Our work demonstrated a significant increase in the quality of the optimized STO thin films with respect to STO films grown prior to the MOCVD hardware and growth parameter modifications. Optimized STO films had a tunability of 20%, a dielectric constant of 200, and loss tangent of less than 1% at 100 kHz.

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Document Details

Document Type
Technical Report
Publication Date
Dec 01, 2015
Accession Number
AD1000372

Entities

People

  • C. Hubbard
  • D. Shreiber
  • Eric H. Ngo
  • Erik Enriquez
  • Melanie W. Cole
  • S. G. Hirsch

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Dielectric Permittivity
  • Dielectric Properties
  • Diffraction
  • Electrical Properties
  • Electron Microscopy
  • Films
  • Flow Rate
  • Gas Flow
  • Mass Flow
  • Materials
  • Military Research
  • Scanning Electron Microscopy
  • Thin Films
  • Vapor Deposition
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene