Energy-Efficient Phase-Change Memory with Graphene as a Thermal Barrier

Abstract

Phase-change memory (PCM) is an importantclass of data storage, yet lowering the programming current of individual devices is known to be a significant challenge. Herewe improve the energy-efficiency of PCM by placing a graphene layer at the interface between the phase-change material, Ge2Sb2Te5 (GST), and the bottom electrode (W)heater. Graphene-PCM (G-PCM) devices have approximately 40 lowerRESET current compared to control devices without the graphene. This is attributed to the graphene as an added interfacial thermal resistance which helps confine the generated heat inside the active PCM volume. The G-PCM achieves programming up to 105 cycles, and the graphene could further enhance the PCM endurance by limiting atomic migration or material segregation at the bottom electrode interface.

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Document Details

Document Type
Technical Report
Publication Date
Sep 02, 2015
Accession Number
AD1002778

Entities

People

  • Aditya Sood
  • Chiyui Ahn
  • Christopher M Neumann
  • Eric Pop
  • H. P. Wong
  • Kenneth E. Goodson
  • Mehdi Asheghi
  • Scott W. Fong
  • Seunghyun Lee
  • Yongsung Kim

Organizations

  • Stanford University

Tags

DTIC Thesaurus Topics

  • Carbon Nanotubes
  • Cells
  • Chemical Vapor Deposition
  • Conductivity
  • Efficiency
  • Electrical Engineering
  • Electron Beam Lithography
  • Electron Beams
  • Energy
  • Engineering
  • Engineers
  • Films
  • Fullerenes
  • Fungi
  • Graphene
  • Heat Energy
  • Materials
  • Materials Engineering
  • Materials Processing
  • Materials Science
  • Phase Change Materials
  • Resistance
  • Thermal Conductivity
  • Thermal Resistance
  • Thin Films

Readers

  • Energy Conservation and Renewable Energy Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Microelectronics