Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

Abstract

We have developed a two-step growth scheme for single-crystal Al2O3 tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminum (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al2O3 layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al2O3 junction may open a new venue for coherent quantum devices.

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Document Details

Document Type
Technical Report
Publication Date
Mar 30, 2016
Accession Number
AD1004413

Entities

People

  • D. P. Pappas
  • J. M. Martinis
  • K. Cicak
  • K. D. Osborn
  • Ken B. Cooper
  • M. Steffen
  • R. Mcdermott
  • R. W. Simmonds
  • Sangheon Oh

Organizations

  • National Institute of Standards and Technology

Tags

Communities of Interest

  • Air Platforms

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Critical Temperature
  • Crystals
  • Diffraction
  • Electron Spectroscopy
  • Evaporation
  • Fabrication
  • Films
  • High Temperature
  • Low Temperature
  • Melting Point
  • Quantum Bits
  • Quantum Computers
  • Quantum Computing
  • Single Crystals
  • Three Dimensional

Fields of Study

  • Materials science
  • Physics

Readers

  • Materials Science and Engineering.
  • Semiconductor Device Technology
  • Superconducting Magnet Technology

Technology Areas

  • Quantum Computing