Increase in Spin Injection Efficiency of a CoFe/MgO (100) Tunnel Spin Injector with Thermal Annealing

Abstract

Postgrowth thermal annealing of a CoFe/MgOs100 tunnel spin injector grown on aGaAs/AlGaAs quantum well structure results in a significantly increased spin injection efficiency as inferred from the polarization of heavy-hole electroluminescence from a quantum well optical detector. The as-deposited sample displayed an initial polarization at 100 K of 43%, which was increased to 52% after a 1 h anneal at 300 C, and finally to 55% after a second 1 h anneal at340 C. The polarization remained unchanged upon further annealing to temperatures as high as400 C. These results show that tunnel spin injectors based on CoFe/MgO are robust with high thermal stability, making them useful for device applications.

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Document Details

Document Type
Technical Report
Publication Date
Jan 24, 2005
Accession Number
AD1005493

Entities

People

  • J. S. Harris
  • R. M. Macfarlane
  • R. M. Shelby
  • Rui Wang
  • S. R. Banks
  • S. S. Parkin
  • Xin Jiang

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics
  • Sensors

DTIC Thesaurus Topics

  • Annealing
  • Circular Polarization
  • Curie Temperature
  • Detection
  • Detectors
  • Efficiency
  • Electrons
  • Injectors
  • Low Temperature
  • Magnetic Fields
  • Magnetometers
  • Measurement
  • Optical Detectors
  • Polarization
  • Quantum Wells
  • Semiconductors
  • Thermal Stability

Fields of Study

  • Materials science

Readers

  • Internal Combustion Engine (ICE) Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • AI & ML
  • AI & ML - Neural Networks
  • Quantum Computing
  • Quantum Science - Quantum Dots