ErAs Epitaxial Ohmic Contacts to InGaAs/InP

Abstract

We report epitaxial ErAs semimetal Ohmic contacts onto n-type In0.53Ga0.47As grown on InP. The contacts were formed by molecular beam epitaxial growth of ErAs on InAs/InGaAs. Transmission line measurements showed minimum specific contact resistivities of 1.5 +/- 0.4 omega mum2 (horizontal specific contact resistivity PH, 4.20 omega mum) for the ErAs/InAs/InGaAs contact. The extracted contact resistance is larger than the true value because of the lateral oxidation of ErAs. The contacts degrade over time and at elevated temperatures because of the oxidation of the ErAs, making it difficult to use as surface contacts, but they are suitable as low-resistance buried contacts.

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Document Details

Document Type
Technical Report
Publication Date
Feb 26, 2009
Accession Number
AD1005984

Entities

People

  • Arthur C. Gossard
  • Brian J. Thibeault
  • Jeramy D. Zimmerman
  • Joel Cagnon
  • M.J.W. Rodwell
  • Mark A. Wistey
  • Seth R. Bank
  • Susanne Stemmer
  • Uttam Singisetti

Organizations

  • University of California, Santa Barbara

Tags

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Compound Semiconductors
  • Electron Density
  • Electrons
  • Epitaxial Growth
  • Fermi Levels
  • Field Effect Transistors
  • Heterojunction Bipolar Transistors
  • Measurement
  • Metal-Semiconductor Junctions
  • Metals
  • Molecular Beams
  • Power Electronics
  • Resistance
  • Semiconductor Devices
  • Semiconductors
  • Transistors

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology