Interaction of Radiation with Graphene Based Nanomaterials for Sensing Fissile Materials
Abstract
We fabricated graphene on various semiconductor substrates and graphene nanocomposites with semiconductor nanoparticle fillings. We studies the transient interactions of photons (visible, X-rays and gamma rays) with graphene field effect transistors (GFET) made from exfoliated, epitaxial, and CVD graphene on various absorber substrates such as Si, SiC, and GaAs, CdTe. The potential of GFETs to sense ionizing radiation with high sensitivity, low noise, and room temperature operationhas been experimentally demonstrated. We studied the photoresponse (photoconductivity) of photodectors based on graphene, graphene composite and graphene-semiconductor hybrid and achieved a high photoresponsivity at room temperature. We also investigated the long term effects of charged radiation (particular e-beam) on graphene material and its devices. Our work on the exploiting graphene-based nanostructured materials to detect ionizing radiations with high sensitivity may lead to new schemes of sensing fissle materials at long range, a major challenge in countering weapons of mass destruction (WMD).
Document Details
- Document Type
- Technical Report
- Publication Date
- Mar 01, 2016
- Accession Number
- AD1006210
Entities
People
- Yong P. Chen
Organizations
- Purdue University