Window for Optimal Frequency Operation and Reliability of 3DEG and 2DEG Channels for Oxide Microwave MESFETs and HFETs

Abstract

This was a study of hot-electron transport, noise, and energy relaxation for doped zinc-oxide and structured ZnO transistor materials with a 2-D electron gas (2DEG) channel subjected to a strong electric field. We conclude that the ZnO 3DEG and 2DEG channels can be operated at the electron density window with better performance than at the off-window electron densities. Models based on the Boltzmann kinetic equation for hot electrons fail to interpret the experimental results unless hot-phonon accumulation is taken into account; assumption of electron density-independent hot-phonon lifetimes explains the transition of the hot electron-hot phonon system from weak to intense coupling but fails to predict window position.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 2016
Accession Number
AD1007707

Entities

People

  • Arvydas Matulionis

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Dielectric Permittivity
  • Electric Fields
  • Electron Density
  • Electron Energy
  • Electron Gas
  • Electrons
  • Equations
  • Field Effect Transistors
  • Frequency
  • Frequency Bands
  • Measurement
  • Scattering
  • Semiconductors
  • Transistors
  • Transitions
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics