Sulfur Doping of InAs

Abstract

We investigated the sulfur doping limits of InAs using ion implantation and rapid thermal annealing for plasmonic applications. Previous studies suggested that higher electron concentrations would be possible using sulfur doping than silicon, which represents the current state-of-the-art dopant. While we achieved near record active electron concentrations with sulfur, we found that dopant diffusion ultimately limited the maximum achievable carrier concentration.

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Document Details

Document Type
Technical Report
Publication Date
Jun 04, 2015
Accession Number
AD1007860

Entities

People

  • Seth R. Bank

Organizations

  • University of Texas at Austin

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Critical Temperature
  • Department Of Defense
  • Electrical Properties
  • Electron Mobility
  • Electrons
  • Hall Effect
  • Ion Implantation
  • Mass Spectrometry
  • Materials
  • Measurement
  • Optical Properties
  • Plasmonic Materials
  • Reflectivity
  • Semiconductors
  • Spectrometers
  • Students

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Nanoscale Plasmonic Nanotechnology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics