Preparation of Copper (Cu)-Nickel (Ni) Alloy Thin Films for Bilayer Graphene Growth

Abstract

Co-sputtered copper (Cu)-nickel (Ni) alloys with layered thin-film ratios of 6:1, 4:1, and 3:1 were developed for use as a catalyst for the growth of graphene. A design of experiments was initiated with 3 tasks to complete: 1) metal preparation designed to achieve preferred (111) oriented films, 2) alloying of the layered films, and 3) the synthesis of AB-stacked quality bilayer graphene via low-pressure chemical vapor deposition (LPCVD). This report covers the analysis of the first 2 tasks by revealing the detailed morphological changes in the metal surfaces such as roughness, grain size, and crystal orientation due to the effects of annealing temperature, hydrogen (H2)/argon (Ar) gas ratio, and pressure. These variables are expected to have a major impact on the growth of graphene for different Cu-Ni thin-film concentrations.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Feb 01, 2016
Accession Number
AD1007947

Entities

People

  • Andrew A. Chen
  • Eugene S. Zakar
  • Robert A. Burke

Organizations

  • United States Army Research Laboratory

Tags

DTIC Thesaurus Topics

  • Annealing
  • Catalysts
  • Chemical Vapor Deposition
  • Films
  • Grain Growth
  • Grain Size
  • Graphene
  • Materials
  • Materials Processing
  • Measurement
  • Military Research
  • Orientation (Direction)
  • Roughness
  • Surface Roughness
  • Thin Films
  • Vapor Deposition
  • X Rays

Fields of Study

  • Materials science

Readers

  • Materials Science and Engineering.
  • Powder metallurgy of Titanium alloys.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene