Spectroscopic Signatures for Interlayer Coupling in MoS2-WSe2 van der Waals Stacking

Abstract

Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular MoS2 monolayers on top of WSe2 monolayers, all grown by chemical vapor deposition (CVD). Raman spectroscopy and photoluminescence (PL) studies reveal that these mechanically stacked monolayers are not closely coupled, but after a thermal treatment at 300 deg C, it is possible to produce van der Waals solids consisting of two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive Raman out-of-plane mode A(expn 2) (sub 1g) for WSe2 (309 cm[expn -1]) is found sensitive to the coupling between two TMD monolayers. The presence of interlayer excitonic emissions and the changes in other intrinsic Raman modes such as E" for MoS2 at 286 cm(expn -1) and A(expn 2) (sub 1g) for MoS2 at around 463 cm(expn -1) confirm the enhancement of the interlayer coupling.

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Document Details

Document Type
Technical Report
Publication Date
Sep 07, 2014
Accession Number
AD1009690

Entities

People

  • Humberto Terrones
  • Lain-Jong Li
  • Mauricio Terrones
  • Ming-Yang Li
  • Ming-hui Chiu
  • Wei-Ting Hsu
  • Wen-Hao Chang
  • Wengjing Zhang

Organizations

  • Rice University

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Density Functional Theory
  • Energy Bands
  • Lasers
  • Materials
  • Materials Science
  • Optical Properties
  • Raman Scattering
  • Raman Spectra
  • Scattering
  • Semiconductors
  • Solid State Physics
  • Spectra
  • Spectroscopy
  • Transition Metals
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene