Ultrafast Intrinsic Photoresponse and Direct Evidence of Sub-Gap States in Liquid Phase Exfoliated MoS2 Thin Films

Abstract

2-Dimensional structures with swift optical response have several technological advantages, for example they could be used as components of ultrafast light modulators, photo-detectors, and optical switches. Here we report on the fast photo switching behavior of thin films of liquid phase exfoliated MoS2, when excited with a continuous laser of = 658 nm (E = 1.88 eV), over a broad range of laser power. Transient photo-conductivity measurements, using an optical pump and THz probe (OPTP), reveal that photo carrier decay follows a bi-exponential time dependence, with decay times of the order of picoseconds, indicating that the photo carrier recombination occurs via trap states.

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Document Details

Document Type
Technical Report
Publication Date
Jul 15, 2015
Accession Number
AD1009694

Entities

People

  • Ana L. Elias
  • Andrew Winchester
  • Baleeswaraiah Muchharla
  • Catherine Chin
  • Keshav M Dani
  • M. B. Krishna
  • Mauricio Terrones
  • Milinda Wasala
  • Saikat Talapatra
  • Simin Feng
  • Sujoy Ghosh
  • Swastik Kar
  • Takaaki Harada

Organizations

  • Rice University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Charge Carriers
  • Chemical Vapor Deposition
  • Conduction Bands
  • Detection
  • Detectors
  • Energy Bands
  • Field Effect Transistors
  • Materials
  • Materials Science
  • Photodetectors
  • Quantum Efficiency
  • Semiconductors
  • Solid State Physics
  • Spectroscopy
  • Thin Films
  • Two Dimensional

Fields of Study

  • Physics

Readers

  • Materials Science and Engineering.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Semiconductor Device Technology

Technology Areas

  • Directed Energy
  • Directed Energy - Lasers
  • Directed Energy - Pulsed-Laser Deposition